Silicon Carbide MOSFET
| Part Numbe | Specification | BVDS | RDS(on) | ID | VTH | QG | CISS | COSS | CRSS |
| Tc=25℃ | Tc=25℃ | VDD=800V IDS=50A VGS=-5/+20V |
VGS=0V VDS=1000V f=200kHz VAC=25mV |
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| V | mΩ | A | V | nC | pF | pF | pF | ||
| SETY020G120C3 | Preview | 1200 | 20 | 140 | 2.6 | 216 | 5584 | 261 | 16 |
| SETY040G120C3 | Preview | 1200 | 40 | 70 | 2.6 | 109 | 2804 | 130 | 8 |
| SETY080G120C3 | Preview | 1200 | 80 | 35 | 3.0 | 58 | 1377 | 62 | 4 |
