High-Voltage Silicon Carbide Schottky Barrier Diode
| Part Number | Specification | VRRM(V) | IF(ave)(A) | IFSM(A) | IFRM(A) | VF(V) | IR(μA) | QC(nC) |
| tp=10ms | tp=10ms | Tj=25℃ | Tj=25℃ | |||||
| SEDW010G170C3 | Preview | 1700 | 10 | 65 | 52 | 1.4 | 5 | 121 |
| SEDW025G170C3 | Preview | 1700 | 25 | 150 | 120 | 1.5 | 18 | 286 |
| SEDW030G170C3 | Preview | 1700 | 30 | 180 | 144 | 1.5 | 25 | 353 |
| SEDW010G500C3 | Preview | 5000 | 10 | 75 | 60 | 1.4 | 30 | 365 |
