1200V Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Benefits：
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Maximum ratings (TC=25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Value | Unit | Note |
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | ||
| DC Peak Reverse Voltage | VR | 1200 | V | ||
| Continuous Forward Current | IF | TC=25˚C | 80 | A | Fig.3 |
| TC=135˚C | 43 | ||||
| Tc=150˚C | 30 | ||||
| Repetitive Peak Forward Surge Current | IFRM | TC=25˚C, tP=10 ms, Half Sine Pulse | 135 | A | |
| TC=110˚C, tP=10 ms, Half Sine Pulse | 100 | ||||
| Non-Repetitive Forward Surge Current | IFSM | TC=25˚C, tP=10 ms, Half Sine Pulse | 190 | A | |
| TC=110˚C, tP=10 ms, Half Sine Pulse | 166 | ||||
| Non-Repetitive Forward Surge Current | IF,MAX | TC=25˚C, tP=10μs, Square Wave Pulse | 1120 | A | |
| TC=110˚C, tP=10μs, Square Wave Pulse | 930 | ||||
| i²t value | ∫ i²dt | TC=25˚C, tP=10 ms | 181 | A²s | |
| TC=110˚C, tP=10 ms | 138 | ||||
| Power Dissipation | Ptot | TC=25˚C | 454 | W | Fig.4 |
| TC=110˚C | 197 | ||||
| Operating Temperature | TJ | -55 to | ˚C | ||
| +175 | |||||
| Storage Temperature | Tstg | -55 to | ˚C | ||
| +175 | |||||
| TO-247 Mounting Torque | M3 Screw | 1 | Nm | ||
| 6-32 Screw | 8.8 | Ibf-in |
Electrical Characteristics（TJ=25℃）
| Parzameter | Symbol | Test Conditions | Value | Unit | Note | ||
| Min. | Typ. | Max. | |||||
| Forward Voltage | VF | IF=30A, TJ=25°C | 1.5 | 1.8 | V | Fig.1 | |
| IF=30A, TJ=175°C | 2 | 3 | |||||
| Reverse Current | IR | VR=1200V, TJ=25°C | 15 | 250 | μA | Fig.2 | |
| VR=1200V, TJ=175°C | 208 | 450 | |||||
| Total Capacitive Charge | QC | VR=800V, TJ=25°C | 154 | nC | Fig.5 | ||
| Total Capacitance | C | VR=0V,TJ=25°C,f=1MHz | 2425 | pF | Fig.6 | ||
| VR=400V,TJ=25°C,f=1MHz | 138 | ||||||
| VR=800V,TJ=25°C,f=1MHz | 133 | ||||||
| Capacitance Stored Energy | EC | VR=800 V | 38 | μJ | Fig.7 | ||
Thermal Characteristics
| Parameter | Symbol | Value | Unit | Note |
| Thermal Resistance(Junction to Case) | RɵJC | 0.33 | °C/W | Fig. 8 |
Typical Performance
Package Dimensions
Attention
Specifications of any and all products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.
We assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silicon products described or contained herein.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc.
